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1

Impact ionization rates for strained Si and SiGe

Thanh Viet Dinh, Christoph Jungemann

Journal:

Solid-State Electronics

Year:

2009

Language:

english

File:

PDF, 1.98 MB

english, 2009

2

Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics--Part II: Theory

Jech, Markus, Ullmann, Bianka, Rzepa, Gerhard, Tyaginov, Stanislav, Grill, Alexander, Waltl, Michael, Jabs, Dominic, Jungemann, Christoph, Grasser, Tibor

Journal:

IEEE Transactions on Electron Devices

Year:

2018

Language:

english

File:

PDF, 4.30 MB

english, 2018

3

Improving the high-frequency performance of SiGe HBTs by a global additional uniaxial stress

Thanh Viet Dinh, Sung-Min Hong, Christoph Jungemann

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 640 KB

english, 2011

4

Inclusion of the Pauli principle in a deterministic Boltzmann equation solver based on a spherical harmonics expansion

Sung-Min Hong, Christoph Jungemann

Journal:

Journal of Computational Electronics

Year:

2010

Language:

english

File:

PDF, 467 KB

english, 2010

5

Investigation of the performance of strained-SiGe vertical IMOS-transistors

Thanh Viet Dinh, Rainer Kraus, Christoph Jungemann

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 819 KB

english, 2010

6

Comparison of strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs: C–V characteristics, mobility, and ON current

Anh-Tuan Pham, Qing-Tai Zhao, Christoph Jungemann, Bernd Meinerzhagen, Siegfried Mantl, Bart Soree, Geoffrey Pourtois

Journal:

Solid-State Electronics

Year:

2011

Language:

english

File:

PDF, 725 KB

english, 2011

7

Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations

Anh-Tuan Pham, Bart Sorée, Wim Magnus, Christoph Jungemann, Bernd Meinerzhagen, Geoffrey Pourtois

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.40 MB

english, 2012

8

[Computational Microelectronics] Hierarchical Device Simulation || The Monte-Carlo Method

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.96 MB

english, 2003

9

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs

Starkov, Ivan, Ceric, Hajdin, Tyaginov, Stanislav, Grasser, Tibor, Enichlmair, Hubert, Park, Jong-Mun, Jungemann, Christoph

Year:

2011

Language:

english

File:

PDF, 3.21 MB

english, 2011

10

Simulation of electronic noise in disordered organic semiconductor devices based on the master equation

Jungemann, Christoph

Journal:

Journal of Computational Electronics

Year:

2015

Language:

english

File:

PDF, 471 KB

english, 2015

11

SPIE Proceedings [SPIE SPIE Fourth International Symposium on Fluctuations and Noise - Florence, Italy (Sunday 20 May 2007)] Noise and Fluctuations in Circuits, Devices, and Materials - A deterministic solver for the Langevin Boltzmann equation including the Pauli principle

Jungemann, Christoph, Macucci, Massimo, Vandamme, Lode K., Ciofi, Carmine, Weissman, Michael B.

Year:

2007

Language:

english

File:

PDF, 270 KB

english, 2007

12

KMC Simulation of the Electroforming, Set and Reset Processes in Redox-based Resistive Switching Devices

Abbaspour, Elhameh, Menzel, Stephan, Hardtdegen, Alexander, Hoffmann-Eifert, Susanne, Jungemann, Christoph

Journal:

IEEE Transactions on Nanotechnology

Year:

2018

Language:

english

File:

PDF, 4.19 MB

english, 2018

13

[IEEE 2019 20th International Conference on Research and Education in Mechatronics (REM) - Wels, Austria (2019.5.23-2019.5.24)] 2019 20th International Conference on Research and Education in Mechatronics (REM) - Introducing a Cross-University Bachelor’s Programme with Orientation Semester - Enabling a Permeable Academic Education System

Bragard, Michael, Sube, Maike, Schneider, Maike, Jungemann, Christoph

Year:

2019

Language:

english

File:

PDF, 325 KB

english, 2019

14

A Non-Parabolic Six Moments Model for the Simulation of Sub-100 nm Semiconductor Devices

Tibor Grasser, Robert Kosik, Christoph Jungemann, Bernd Meinerzhagen, Hans Kosina, Siegfried Selberherr

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 189 KB

english, 2004

15

A Legendre Polynomial Solver for the Langevin Boltzmann Equation

Christoph Jungemann, Bernd Meinerzhagen

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 204 KB

english, 2004

16

A fast(vec{k}cdotvec{p})solver for hole inversion layers with an efficient 2D

Anh-Tuan Pham, Bernd Meinerzhagen, Christoph Jungemann

Journal:

Journal of Computational Electronics

Year:

2008

Language:

english

File:

PDF, 537 KB

english, 2008

17

On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

Anh-Tuan Pham, Christoph Jungemann, Bernd Meinerzhagen

Journal:

Journal of Computational Electronics

Year:

2009

Language:

english

File:

PDF, 1.74 MB

english, 2009

18

A linear response Monte Carlo algorithm for inversion layers and magnetotransport

Christoph Jungemann, Anh-Tuan Pham, Bernd Meinerzhagen

Journal:

Journal of Computational Electronics

Year:

2006

Language:

english

File:

PDF, 248 KB

english, 2006

19

[Computational Microelectronics] Hierarchical Device Simulation || Scattering Mechanisms

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.56 MB

english, 2003

20

[Computational Microelectronics] Hierarchical Device Simulation || Introduction

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.89 MB

english, 2003

21

[Computational Microelectronics] Hierarchical Device Simulation || Full-Band Structure

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 2.19 MB

english, 2003

22

[Computational Microelectronics] Hierarchical Device Simulation || Semiclassical Transport Theory

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.70 MB

english, 2003

23

[Computational Microelectronics] Hierarchical Device Simulation || Device Simulation

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 2.75 MB

english, 2003

24

[Computational Microelectronics] Hierarchical Device Simulation || Momentum-Based Transport Models

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 2.40 MB

english, 2003

25

[Computational Microelectronics] Hierarchical Device Simulation || Stochastic Properties of Monte-Carlo Device Simulations

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 1.63 MB

english, 2003

26

[Computational Microelectronics] Hierarchical Device Simulation || Results

Jungemann, Christoph, Meinerzhagen, Bernd

Year:

2003

Language:

english

File:

PDF, 6.12 MB

english, 2003

27

[Computational Microelectronics] Deterministic Solvers for the Boltzmann Transport Equation ||

Hong, Sung-Min, Pham, Anh-Tuan, Jungemann, Christoph

Year:

2011

Language:

english

File:

PDF, 7.15 MB

english, 2011

28

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - A self-consistent solution of the Poisson, Schrödinger and Boltzmann equations by a full Newton-Raphson approach for nanoscale semiconductor devices

Ruic, Dino, Jungemann, Christoph

Year:

2013

Language:

english

File:

PDF, 668 KB

english, 2013

29

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Comparison of (001), (110) and (111) uniaxial- and biaxial- strained-Ge and strained-Si PMOS DGFETs for all channel orientations: Mobility enhancement, drive current, delay and off-state leakage

Krishnamohan, Tejas, Kim, Donghyun, Thanh Viet Dinh,, Pham, Anh-tuan, Meinerzhagen, Bernd, Jungemann, Christoph, Saraswat, Krishna

Year:

2008

Language:

english

File:

PDF, 837 KB

english, 2008

30

A Deterministic approach to noise in a non-equilibrium electron–phonon system based on the Boltzmann equation

Ramonas, Mindaugas, Jungemann, Christoph

Journal:

Journal of Computational Electronics

Year:

2015

Language:

english

File:

PDF, 768 KB

english, 2015

31

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Spherical harmonics expansion of the conduction band for deterministic simulation of SiGe HBTs with full band effects

Matz, Gregor, Hong, Sung-Min, Jungemann, Christoph

Year:

2010

Language:

english

File:

PDF, 335 KB

english, 2010

32

[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Impact ionization rates for strained SiGe

Dinh, Thanh Viet, Jungemann, Christoph

Year:

2009

Language:

english

File:

PDF, 1.66 MB

english, 2009

33

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Inclusion of the Pauli principle in a deterministic Boltzmann equation solver for semiconductor devices

Hong, Sung-Min, Jungemann, Christoph

Year:

2010

Language:

english

File:

PDF, 112 KB

english, 2010

34

[IEEE ESSDERC 2011 - 41st European Solid State Device Research Conference - Helsinki, Finland (2011.09.12-2011.09.16)] 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - Impact of the carrier distribution function on hot-carrier degradation modeling

Tyaginov, Stanislav, Starkov, Ivan, Jungemann, Christoph, Enichlmair, Hubert, Park, Jong-Mun, Grasser, Tibor

Year:

2011

Language:

english

File:

PDF, 552 KB

english, 2011

35

[IEEE 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC) - Athens, Greece (2009.09.14-2009.09.18)] 2009 Proceedings of the European Solid State Device Research Conference - Investigation of the performance of strained-SiGe vertical IMOS-transistors

Dinh, Thanh Viet, Kraus, Rainer, Jungemann, Christoph

Year:

2009

Language:

english

File:

PDF, 1.36 MB

english, 2009

36

[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Spherical harmonics solver for coupled hot-electron — Hot-phonon system

Ramonas, Mindaugas, Jungemann, Christoph

Year:

2013

Language:

english

File:

PDF, 690 KB

english, 2013

37

[IEEE 2008 IEEE Silicon Nanoelectronics Workshop (SNW) - Honolulu, HI, USA (2008.06.15-2008.06.16)] 2008 IEEE Silicon Nanoelectronics Workshop - Mobilty modeling of strained germanium (s-Ge) quantum well (QW) heterostructure pMOSFETs

Krishnamohan, Tejas, Pham, Anh-Tuan, Jungemann, Christoph, Meinerzhagen, Bernd, Saraswat, Krishna C.

Year:

2008

Language:

english

File:

PDF, 1.48 MB

english, 2008

38

[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - Quasi-ballisticity of the electron transport in a 16nm silicon double-gate nMOSFET

Zhao, Kai, Jungemann, Christoph, Liu, Xiaoyan

Year:

2011

Language:

english

File:

PDF, 813 KB

english, 2011

39

[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - A deterministic Boltzmann equation solver for two-dimensional semiconductor devices

Sung-Min Hong,, Jungemann, Christoph, Bollhofer, Matthias

Year:

2008

Language:

english

File:

PDF, 538 KB

english, 2008

40

[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET

Tyaginov, Stanislav, Starkov, Ivan, Triebl, Oliver, Ceric, Hajdin, Grasser, Tibor, Enichlmair, Hubert, Park, Jong-Mun, Jungemann, Christoph

Year:

2011

Language:

english

File:

PDF, 350 KB

english, 2011

41

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Simulation of magnetotransport in nanoscale devices

Sung-Min Hong,, Jungemann, Christoph

Year:

2008

Language:

english

File:

PDF, 882 KB

english, 2008

42

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Investigation of the Noise Performance of Double-Gate MOSFETs by Deterministic Simulation of the Boltzmann Equation

Hong, Sung-Min, Jungemann, Christoph

Year:

2009

Language:

english

File:

PDF, 271 KB

english, 2009

43

[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - Stable implementation of a deterministic multi-subband Boltzmann solver for Silicon Double-Gate nMOSFETs

Zhao, Kai, Hong, Sung-Min, Jungemann, Christoph, Han, Ru-Qi

Year:

2010

Language:

english

File:

PDF, 350 KB

english, 2010

44

[IEEE ESSDERC 2007 - 37th European Solid State Device Research Conference - Muenchen, Germany (2007.09.11-2007.09.13)] ESSDERC 2007 - 37th European Solid State Device Research Conference - Microscopic modeling of high frequency noise in SiGe HBTs

Ramonas, Mindaugas, Sakalas, Paulius, Jungemann, Christoph, Schroter, Michael, Kraus, Wolfgang, Shimukovitch, Artur

Year:

2007

Language:

english

File:

PDF, 154 KB

english, 2007

45

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Deterministic simulation of SiGe HBTs based on the Boltzmann equation

Sung-Min Hong,, Jungemann, Christoph

Year:

2008

Language:

english

File:

PDF, 176 KB

english, 2008

46

[IEEE 2008 9th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT) - Beijing, China (2008.10.20-2008.10.23)] 2008 9th International Conference on Solid-State and Integrated-Circuit Technology - Advances in spherical harmonics solvers for the Boltzmann equation

Jungemann, Christoph

Year:

2008

Language:

english

File:

PDF, 1.68 MB

english, 2008

47

[IEEE 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Bordeaux, France (2013.09.30-2013.10.3)] 2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) - Investigation of electronic noise in THz SiGe HBTs by microscopic simulation

Jungemann, Christoph, Hong, Sung-Min

Year:

2013

Language:

english

File:

PDF, 324 KB

english, 2013

48

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Theoretical Investigation Of Performance In Uniaxially- and Biaxially-Strained Si, SiGe and Ge Double-Gate p-MOSFETs

Krishnamohan, Tejas, Jungemann, Christoph, Kim, Donghyun, Ungersboeck, Enzo, Selberherr, Siegfried, Wong, Philip, Nishi, Yoshio, Saraswat, Krishna

Year:

2006

Language:

english

File:

PDF, 302 KB

english, 2006

49

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Ballisticity of the linear response transport in nanometric silicon devices

Jungemann, Christoph

Year:

2007

Language:

english

File:

PDF, 296 KB

english, 2007

50

[IEEE 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Yokohama, Japan (2014.9.9-2014.9.11)] 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - DC, AC and noise simulation of organic semiconductor devices based on the master equation

Jungemann, Christoph, Zimmermann, Christoph

Year:

2014

Language:

english

File:

PDF, 467 KB

english, 2014